| PART |
Description |
Maker |
| AGR19090E AGR19090EF AGR19090EU |
90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| MLO81100-01960 |
1930-1990 MHz, Surface mount voltage controlled oscillator PCS
Surface Mount Voltage Controlled Oscillator PCS 1930 - 1990 MHz
|
MA-Com
MACOM[Tyco Electronics]
|
| TQ3M31 |
832-894 MHz & 1930-1990 MHz Dual Band LNA
From old datasheet system
Dual Band LNA: 2.8V, Cellular and PCS Band CDMA/AMPS LNA IC
|
TRIQUINT[TriQuint Semiconductor]
TriQuint Semiconductor,Inc.
|
| DSI-253R0.820G DS1-20L1.960G |
810 MHz - 830 MHz RF/MICROWAVE ISOLATOR
1930 MHz - 1990 MHz RF/MICROWAVE ISOLATOR
|
HITACHI METALS LTD
|
| MHW1910D |
MHW1910-1 1930-1990 MHz, 10 W RF Power LDMOS Amplifier - Archived
|
Motorola
|
| PTFA190451E PTFA190451F |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 - 1990 MHz
|
Infineon Technologies AG
|
| MRF6S19140H |
MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
MOTOROLA
|
| PTFA192001F PTFA192001E |
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz
|
Infineon Technologies AG
|
| PTFB193404F |
Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz
|
Infineon Technologies AG
|
| PTFA191001E PTFA191001F |
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz
|
Infineon Technologies AG
|
| RFP-1500-19-50 RFP-1500-9-50 |
1930 MHz - 1990 MHz 50 ohm RF/MICROWAVE TERMINATION
925 MHz - 960 MHz 50 ohm RF/MICROWAVE TERMINATION
|
Anaren, Inc.
ANAREN INC
|
| DP52-0002-TR DP52-00021 |
Low Cost SMT Dual Band Diplexer, 824-960/1850-1990 MHz(AMPS/PCS), 880-960/1700-1900 MHz(GSM/DCS)
|
Tyco Electronics
|
